Транзистор RJH60F0DPK-00#T0

IGBT-транзисторы, Silicon N Channel IGBT, VCES = 600 V, Ic(100°C) = 25, Ic(peak) = 100 A, VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C), High speed switching, Built in fast recovery diode (140 ns typ.) in one package, Package name: TO-3P