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GD5F1GQ4RCYIGGigaDeviceSPI NAND Flash 1Gbit, 1.8V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет85,60
GD5F1GQ4UBYIGGigaDeviceSPI NAND Flash 1Gbit, 2.7V-3.6V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет10,49
GD5F1GQ4UCYIGGigaDeviceSPI NAND Flash 1Gbit, 3.3V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет50,57
GD5F1GQ4UCYIGRGigaDevice1Gbit 3.3V WSON 8*6600089,70
+1
GD5F2GQ4RCYIGGigaDeviceSPI NAND Flash 2Gbit, 1.8V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F2GQ4UBYIGGigaDeviceSPI NAND Flash 2Gbit, 3.3V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F2GQ4UCYIGGigaDeviceSPI NAND Flash 2Gbit, 3.3V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F4GQ4RBYIGGigaDeviceSPI NAND Flash 4Gbit, 1.8V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F4GQ4RCYIGGigaDeviceSPI NAND Flash 4Gbit, 1.8V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F4GQ4UBYIGGigaDeviceSPI NAND Flash 4Gbit, 3.3V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
GD5F4GQ4UCYIGGigaDeviceSPI NAND Flash 4Gbit, 3.3V, Single / Dual / Quad SPI 120 MHz, WSON8x6, Ta=-40..+85 C, GigaDeviceНет---
K9F1G08U0D-SCB0000Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет128,87
K9F1G08U0D-SCB0T00Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет128,87
K9F1G08U0D-SIB0000Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет128,87
K9F1G08U0D-SIB0T00Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет128,87
K9F1G08U0E-SCB0000Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет128,87
K9F1G08U0E-SCB0T00Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет128,87
K9F1G08U0E-SIB0000Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет128,87
K9F1G08U0E-SIB0T00Samsung SemiconductorIC, NAND-память, 1Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет128,87
K9F2G08U0C-SCB0000Samsung SemiconductorIC, NAND-память, 2Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет163,56
K9F2G08U0C-SCB0T00Samsung SemiconductorIC, NAND-память, 2Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет163,56
K9F2G08U0C-SIB0000Samsung SemiconductorIC, NAND-память, 2Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет163,56
K9F2G08U0C-SIB0T00Samsung SemiconductorIC, NAND-память, 2Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет163,56
K9F4G08U0D-SCB0000Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет262,68
K9F4G08U0D-SCB0T00Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет262,68
K9F4G08U0D-SIB0000Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет262,68
K9F4G08U0D-SIB0T00Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет262,68
K9F4G08U0E-SCB0000Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет262,68
K9F4G08U0E-SCB0T00Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет262,68
K9F4G08U0E-SIB0000Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет262,68
K9F4G08U0E-SIB0T00Samsung SemiconductorIC, NAND-память, 4Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет262,68
K9K8G08U0D-SCB0000Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет535,28
K9K8G08U0D-SCB0T00Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет535,28
K9K8G08U0D-SIB0000Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет535,28
K9K8G08U0D-SIB0T00Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет535,28
K9K8G08U0E-SCB0000Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет535,28
K9K8G08U0E-SCB0T00Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет535,28
K9K8G08U0E-SIB0000Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет535,28
K9K8G08U0E-SIB0T00Samsung SemiconductorIC, NAND-память, 8Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет535,28
K9WAG08U1D-SCB0000Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет1 021,01
K9WAG08U1D-SCB0T00Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет1 021,01
K9WAG08U1D-SIB0000Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет1 021,01
K9WAG08U1D-SIB0T00Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет1 021,01
K9WAG08U1E-SCB0000Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет1 021,01
K9WAG08U1E-SCB0T00Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = 0°C..70°CНет1 021,01
K9WAG08U1E-SIB0000Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет1 021,01
K9WAG08U1E-SIB0T00Samsung SemiconductorIC, NAND-память, 16Гб, x8, Vcc=3.3V, TSOP1-48, Ta = -40°C..85°CНет1 021,01
TC58BVG0S3HBAI4JDHTOSHIBA CORP.1Gb BNAND 24nm BGA Tray LB 3V IНет107,33
TC58BVG0S3HBAI4YCLTOSHIBA CORP.1Gb BNAND 24nm BGA Tray LB 3V IНет107,33
TC58BVG0S3HBAI6JDHTOSHIBA CORP.1Gb BNAND 24nm BGA Tray LB 3V IНет100,04